基本信息
工作性質全職
職位類別高級開發
招聘人數1人
學歷要求碩士
工作經驗1-3年
性別要求不限
年齡要求不限
招聘部門不限
工作地點廣東省深圳市南山區高新中一道2號（香港/香港）
聯系方式
聯系人：企業設置不公開
聯系電話：企業設置不公開
職位描述
Responsibilities:
- Design and development of Power Amplifiers (PAs) and front-end modules (FEMs) used in portable applications.
- FEM designs involve the integration of a broad suite of RF technologies including, GaAs HBT PAs, GaAs pHEMT PAs and switches, RF filters.
- Design involve literature review, patent review, CAD simulation, etc.
- Development involve technology development, design optimization, etc.
- The design of PAs, switches and DC bias control circuitry at the GaAs IC level will be required, as well as module level design and integration.
- The production of PAs such as wafer fabrication, packaging, etc. will be required, as well as product testing, failure analysis, etc.
- Additional duties and projects as assigned.
Minimum Qualifications:
- MSc(Eng)/MPhil/PhD in Physics, Electrical/Electronic Engineering, or equivalent education in RF & Microwave training.
- New or recent graduates are encouraged to apply.
- Experience in RF design and development.
- Strong hands-on based aptitude is required.
- Self-starter, able to manage projects with minimal guidance.
Preferred Qualifications:
- Proficient in analysis, design and simulation using CAD tools such as ADS and/or AWR.
- Hands-on testing and diagnostics related RF measurement experience
- Good familiarity with RF/Microwave test equipment and measurement techniques.
- Knowledge in design & development of linear, GaAs HBT and/or pHEMT Power Amplifiers
- Design and development of Power Amplifiers (PAs) and front-end modules (FEMs) used in portable applications.
- FEM designs involve the integration of a broad suite of RF technologies including, GaAs HBT PAs, GaAs pHEMT PAs and switches, RF filters.
- Design involve literature review, patent review, CAD simulation, etc.
- Development involve technology development, design optimization, etc.
- The design of PAs, switches and DC bias control circuitry at the GaAs IC level will be required, as well as module level design and integration.
- The production of PAs such as wafer fabrication, packaging, etc. will be required, as well as product testing, failure analysis, etc.
- Additional duties and projects as assigned.
Minimum Qualifications:
- MSc(Eng)/MPhil/PhD in Physics, Electrical/Electronic Engineering, or equivalent education in RF & Microwave training.
- New or recent graduates are encouraged to apply.
- Experience in RF design and development.
- Strong hands-on based aptitude is required.
- Self-starter, able to manage projects with minimal guidance.
Preferred Qualifications:
- Proficient in analysis, design and simulation using CAD tools such as ADS and/or AWR.
- Hands-on testing and diagnostics related RF measurement experience
- Good familiarity with RF/Microwave test equipment and measurement techniques.
- Knowledge in design & development of linear, GaAs HBT and/or pHEMT Power Amplifiers
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